Professor Saraswat’s research interests are in new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3- dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.
Prof. Saraswat has supervised more than 80 doctoral students, 25 post doctoral scholars and has authored or co-authored 15 patents and over 750 technical papers, of which 10 have received Best Paper Award. He is a Life Fellow of the IEEE. He received the Thomas Callinan Award from The Electrochemical Society in 2000 for his contributions to the dielectric science and technology, the 2004 IEEE Andrew Grove Award for seminal contributions to silicon process technology, Inventor Recognition Award from MARCO/FCRP in 2007, the Technovisionary Award from the India Semiconductor Association in 2007, BITS Pilani Distinguished Alumnus Awards in 2012 and the Semiconductor Industry Association (SIA) Researcher of the Year Award in 2012. He is listed by ISI as one of the Highly Cited Authors in his field.
